STP14NK50Z

STP14NK50Z, superMESH power MOSFET, TO, 500V, 14A, STMicroelectronics

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.48~0.48 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
10 ~ 1000 :	0.48 / Piece

PartNumber:: STP14NK50Z

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 12+

Availability:: Supply Ability: 0/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Lucy's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-02-03

From Other Seller

Part Number:STP14NK50Z
US $0.48 - 0.48
Quantity:

piece

Product Summary

The STP14NK50Z is a superMESH power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application.

Parametrics

STP14NK50Z absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 500 V; (2)VGS Gate-source voltage: ± 30 V; (3)ID Drain current (continuous) at TC = 25 ℃: 14 A; (4)ID Drain current (continuous) at TC = 100 ℃: 7.6 A; (5)IDM Drain current (pulsed): 48 A; (6)PTOT Total dissipation at TC = 25 ℃: 150 W; Derating factor: 1.20 W/℃; (7)VESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ): 4000 V; (8)dv/dt Peak diode recovery voltage slope: 4.5 V/ns; (9)Tj Tstg Operating junction temperature, Storage temperature: -55 to 150 ℃.

Features

STP14NK50Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.