(Hong Kong)
Product Summary
The 2SA1759T100P is a high-voltage switching transistor.
Parametrics
2SA1759T100P absolute maximum ratings: (1)Collector-base voltage, VCBO: -400v; (2)Collector-emitter voltage, VCEO: -400v; (3)Emitter-base voltage, VEBO: -7v; (4)Collector current, IC: -0.1 A(dc); -0.2A(pulse); (5)Collector power dissipation, PC: 0.5w, 2w; (6)Junction temperature, Tj: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.
Features
2SA1759T100P features: (1)High breakdown voltage, BVCEO = -400V; (2)Low saturation voltage, typically VCE (sat)= -0.2V at IC / IB = -20mA / -2mA; (3)High switching speed, typically tf = 1μs at Ic =100mA; (4)Wide SOA (safe operating area); (5)Complements the 2SC4505.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SA1759T100P |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 400V 0.1A |
Data Sheet |
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2SA1006 |
Other |
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Data Sheet |
Negotiable |
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2SA1006A |
Other |
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Data Sheet |
Negotiable |
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2SA1006B |
Other |
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Data Sheet |
Negotiable |
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2SA1008 |
Other |
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Data Sheet |
Negotiable |
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2SA1009 |
Other |
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Data Sheet |
Negotiable |
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2SA1009A |
Other |
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Data Sheet |
Negotiable |
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