Product Summary

The RFD8P05SM is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFD8P05SM was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The transistor can be operated directly from integrated circuits.

Parametrics

RFD8P05SM absolute maximum ratings: (1)Drain to Source Voltage (Note 1), VDSS: -50 V; (2)Drain to Gate Voltage (RGS = 20KW) (Note 1), VDGR: -50 V; (3)Continuous Drain Current, ID: -8 A; (4)Pulsed Drain Current (Note 3), IDM: -20 A; (5)Gate to Source Voltage, VGS: ±20 V; (6)Maximum Power Dissipation, PD: 48 W; (7)Dissipation Derating Factor: 0.27 W/℃; (8)Single Pulse Avalanche Energy Rating, EAS: See Figure 6; (9)Operating and Storage Temperature, TJ, TSTG: -55 to 175℃; (10)Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10s, TL: 300℃; (11)Package Body for 10s, See Techbrief 334, Tpkg: 260℃.

Features

RFD8P05SM features: (1)8A, 50V; (2)rDS(ON) = 0.300W; (3)UIS SOA Rating Curve; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature, TB334 "Guidelines for Soldering Surface Mount Components to PC Boards".

Diagrams

RFD8P05SM block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
RFD8P05SM
RFD8P05SM
Fairchild Semiconductor
MOSFET TO-252AA P-Ch Power
Data Sheet
Negotiable 
RFD8P05SM9A
RFD8P05SM9A
Fairchild Semiconductor
MOSFET TO-252
Data Sheet
Negotiable