(Hong Kong)
Product Summary
The PBSS4160T is an NPN low VCEsat transistor in a SOT23 plastic package. It is used for Telecom infrastructure, Industrial, DC-to-DC conversion, Supply line switching, Driver in low supply voltage applications (e.g. lamps and LEDs), Inductive load driver (e.g. relays, buzzers and motors).
Parametrics
PBSS4160T absolute maximum ratings: (1)collector-base voltage open emitter: 80 V; (2)VCEO collector-emitter voltage open base: 60 V; (3)VEBO emitter-base voltage open collector: 5 V; (4)IC collector current (DC): 0.9 A; (5)ICM peak collector current t = 1 ms or limited by Tj(max): 2 A; (6)IB base current (DC): 300 mA; (7)IBM peak base current: 1 A; (8)Ptot total power dissipation Tamb ≤ 25 °C: 270 mW; (9)Tstg storage temperature: −65 +150 °C; (10)Tj junction temperature: 150 °C; (11)Tamb operating ambient temperature: −65 +150 °C.
Features
PBSS4160T features: (1)Low collector-emitter saturation voltage VCEsat; (2)High collector current capability IC and ICM; (3)High efficiency, reduces heat generation; (4)Reduces printed-circuit board area required; (5)Cost effective replacement for medium power transistor BCP55 and BCX55.
Diagrams
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Pricing (USD) |
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 PBSS4160T |
Other |
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Data Sheet |
Negotiable |
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PBSS4160T T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS BISS TAPE-7 |
Data Sheet |
Negotiable |
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PBSS4160T,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS BISS TAPE-7 |
Data Sheet |
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