Product Summary

The P5504EDG is a P-Channel Logic Level Enhancement Mode Field Effect Transistor.

Parametrics

P5504EDG absolute maximum ratings: (1)Drain-Source Voltage: -40V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Pulsed Drain Current a IDM: -32A; (4)Continuous Drain Current: -8A; (5)Continuous Drain Current: -6A; (6)Maximum Power Dissipation TC = 25 °C PD: 28 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55°C to + 150 °C; (8)Soldering Recommendations (Peak Temperature)d for 10 s: 275 °C.

Features

P5504EDG features: (1)V(BR)DSS: -40V; (2)RDS(ON): 55mΩ; (3)ID: -8A.

Diagrams

P5504EDG plackage dimensions