FDA20N50F

N-Channel MOSFET, 500V, 22A, 0.26Ω, FDA20N50F, TO-3PN

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Price:: US $0.98~1.31 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 9 :	1.31 / Piece
10 ~ 99 :	1.22 / Piece
100 ~ 1000 :	0.98 / Piece

PartNumber:: FDA20N50F

Brand:: Fairchild Semiconductor - Fairchild | D/C: 11+

Availability:: Supply Ability: 5000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-05-24

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Part Number:FDA20N50F
US $0.98 - 1.31
Quantity:

piece

Product Summary

The FDA20N50F is an N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDA20N50F is well suited for high efficient switched mode power supplies and active power factor correction.

Parametrics

FDA20N50F absolute maximum ratings: (1)Drain to Source Voltage: 500 V; (2)VGSS Gate to Source Voltage: ±30 V; (3)ID Drain Current -Continuous (TC = 25°C): 22 A, Continuous (TC = 100°C): 13A; (4)IDM Drain Current - Pulsed: 88 A; (5)EAS Single Pulsed Avalanche Energy: 1110 mJ; (6)IAR Avalanche Current: 22 A; (7)EAR Repetitive Avalanche Energy: 39 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25°C): 388 W, Derate above 25°C: 3.1 W/°C; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150°C.

Features

FDA20N50F features: (1)RDS(on)= 0.22Ω ( Typ.)@ VGS = 10V, ID = 11A; (2)Low gate charge ( Typ. 50nC ); (3)Low Crss ( Typ. 27pF ); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)RoHS compliant.