(Hong Kong)
Product Summary
The IXTA36N30P is a polarht power MOSFET.
Parametrics
IXTA36N30P absolute maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 300 V; (2)VDGR TJ = 25℃ to 150℃; RGS = 1 MΩ: 300 V; (3)VGSM: ±20 V; (4)ID25 TC = 25℃: 36 A; (5)IDM TC = 25℃, pulse width limited by TJM: 90 A; (6)IAR TC = 25℃: 36 A; (7)EAR TC = 25℃: 30 mJ; (8)EAS TC = 25℃: 1.0 J; (9)PD TC = 25℃: 300 W; (10)TJ: -55 to +150 ℃; (11)TJM: 150 ℃; (12)Tstg: -55 to +150 ℃; (13)TL 1.6 mm (0.062 in.) from case for 10 s: 300 ℃; (14)Maximum tab temperature for soldering TO-263 package for 10s: 260 ℃.
Features
IXTA36N30P features: (1)International standard packages; (2)Unclamped Inductive Switching (UIS) rated; (3)Low package inductance - easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXTA36N30P |
Ixys |
MOSFET MOSFET N-CH 300V 36A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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IXTA 3N120 |
Other |
|
Data Sheet |
Negotiable |
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|
IXTA05N100 |
Ixys |
MOSFET 0.75 Amps 1000V 15 Rds |
Data Sheet |
Negotiable |
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|
IXTA06N120P |
Ixys |
MOSFET 0.6 Amps 1200V 32 Rds |
Data Sheet |
Negotiable |
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IXTA08N100D2 |
Ixys |
MOSFET N-CH MOSFETS (D2) 1000V 800MA |
Data Sheet |
Negotiable |
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|
IXTA08N100P |
Ixys |
MOSFET 0.8 Amps 1000V 20 Rds |
Data Sheet |
Negotiable |
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|
IXTA08N120P |
Ixys |
MOSFET 0.8 Amps 1200V 25 Rds |
Data Sheet |
Negotiable |
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