Product Summary

The IXTA36N30P is a polarht power MOSFET.

Parametrics

IXTA36N30P absolute maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 300 V; (2)VDGR TJ = 25℃ to 150℃; RGS = 1 MΩ: 300 V; (3)VGSM: ±20 V; (4)ID25 TC = 25℃: 36 A; (5)IDM TC = 25℃, pulse width limited by TJM: 90 A; (6)IAR TC = 25℃: 36 A; (7)EAR TC = 25℃: 30 mJ; (8)EAS TC = 25℃: 1.0 J; (9)PD TC = 25℃: 300 W; (10)TJ: -55 to +150 ℃; (11)TJM: 150 ℃; (12)Tstg: -55 to +150 ℃; (13)TL 1.6 mm (0.062 in.) from case for 10 s: 300 ℃; (14)Maximum tab temperature for soldering TO-263 package for 10s: 260 ℃.

Features

IXTA36N30P features: (1)International standard packages; (2)Unclamped Inductive Switching (UIS) rated; (3)Low package inductance - easy to drive and to protect.

Diagrams

IXTA36N30P dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXTA36N30P
IXTA36N30P

Ixys

MOSFET MOSFET N-CH 300V 36A

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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