(Hong Kong)
Product Summary
The APT30M40JVFR is a high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOSV also achieves faster switching speeds through optimized gate layout.
Parametrics
APT30M40JVFR absolute maximum ratings: (1)Drain-Source Voltage: 300V; (2)Continuous Drain Current @ TC = 25°C: 70A; (3)Pulsed Drain Current: 280A; (4)Gate-Source Voltage Continuous: ±30V; (5)Gate-Source Voltage Transient: ±40V; (6)Total Power Dissipation @ TC = 25°C: 450W; (7)Linear Derating Factor: 3.6W/°C; (8)Operating and Storage Junction Temperature Range: -55 to 150°C; (9)Lead Temperature: 0.063" from Case for 10 Sec.: 300°C; (10)Avalanche Current 1 (Repetitive and Non-Repetitive): 70A; (11)Repetitive Avalanche Energy 1: 50mJ; (12)Single Pulse Avalanche Energy 4: 2500mJ.
Features
APT30M40JVFR features: (1)Fast Recovery Body Diode; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular SOT-227 Package; (5)Faster Switching.
Diagrams
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 APT30M40JVFR |
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MOSFET N-CH 300V 70A SOT-227 |
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