(Hong Kong)
Product Summary
The IXFN200N07 is a HiPerFET Power MOSFET. The applications of the IXFN200N07 include DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls, Low voltage relays.
Parametrics
IXFN200N07 absolute maximum ratings: (1)VDSS, TJ= 25℃ to 150℃: 70 V; (2)VDGR, TJ= 25℃ to 150℃, RGS = 1MΩ: 70 V; (3)VGS, Continuous: ±20 V; (4)VGSM, Transient: ±30 V; (5)ID25, TC= 25℃: 200 A; (6)IL(RMS), Terminal (current limit): 100 A; (7)IDM, TC= 25℃: 600A; (8)IAR, TC= 25℃, 100A; (9)EAR TC = 25℃: 30 mJ; (10)EAS TC = 25: 2J; (11)dv/dt, IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ≤ 150℃, RG = 2 Ω: 5V/ns; (12)PD, TC = 25℃: 600 W.
Features
IXFN200N07 features: (1)International standard package; (2)Encapsulating epoxy meets UL 94 V-0, flammability classification; (3)miniBLOC with Aluminium nitride isolation; (4)Low RDS (on), HDMOSTM process; (5)Rugged polysilicon gate cell structure; (6)Unclamped Inductive Switching (UIS) rated; (7)Low package inductance; (8)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 IXFN200N07 |
Ixys |
MOSFET 70V 200A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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IXFN 23N100 |
Other |
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Data Sheet |
Negotiable |
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IXFN 24N100 |
Other |
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Data Sheet |
Negotiable |
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IXFN 24N100F |
Other |
|
Data Sheet |
Negotiable |
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IXFN 25N80 |
Other |
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Data Sheet |
Negotiable |
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IXFN 27N80 |
Other |
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Data Sheet |
Negotiable |
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IXFN 280N07 |
Other |
|
Data Sheet |
Negotiable |
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