(Hong Kong)
Product Summary
The NDS8947-NL is a P-Channel enhancement mode power field effect transistor which is produced using Fairchild proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The NDS8947-NL is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
NDS8947-NL absolute maximum ratings: (1)VDSS Drain-Source Voltage: -30 V; (2)ID Drain Current - Continuous (TC = 25℃): -4 A; (3)IDM Drain Current - Pulsed: -15 A; (4)VGSS Gate-Source Voltage: -20 V; (5)PD Power Dissipation (TC = 25℃): 2 W; (6)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃.
Features
NDS8947-NL features: (1)-30A, -60V, RDS(on) = 0.026Ω @VGS = -10 V; (2)Low gate charge ( typical 84 nC); (3)Low Crss ( typical 320 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.
Diagrams
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 NDS8410 |
Fairchild Semiconductor |
MOSFET Single N-Ch FET Enhancement Mode |
Data Sheet |
Negotiable |
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NDS8410S |
Other |
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Data Sheet |
Negotiable |
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NDS8425 |
Fairchild Semiconductor |
MOSFET N-Channel MOSFET 2.5V Specified |
Data Sheet |
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NDS8426 |
Other |
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Data Sheet |
Negotiable |
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NDS8426A |
Fairchild Semiconductor |
MOSFET Single N-Ch FET Enhancement Mode |
Data Sheet |
Negotiable |
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NDS8433 |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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