(Hong Kong)
Product Summary
The IRFR5305PBF is a HEXFET Power MOSFET. It is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
Parametrics
Absolute maximum ratings: (1)Continuous Drain Current, VGS @ -10V: -31A; (2)Continuous Drain Current, VGS @ -10V:-22A; (3)Pulsed Drain Current:-110A; (4)Power Dissipation:110W; (5)Linear Derating Factor:0.71W/℃; (6)Gate-to-Source Voltage:±20V; (7)Single Pulse Avalanche Energy:280mJ; (8)Avalanche Current:-16A; (9)Repetitive Avalanche Energy:11mJ; (10)Peak Diode Recovery dv/dt:-5.0V/ns; (11)Operating Junction and Storage Temperature Range:-55℃ to +175℃; (12)Soldering Temperature, for 10 seconds:300℃(1.6mm from case).
Features
Features: (1)Ultra Low On-Resistance; (2)Surface Mount; (3)Advanced Process Technology; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Lead-Free.
Diagrams
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 IRFR5305PBF |
International Rectifier |
MOSFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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