KSD1408YTU

NPN Epitaxial Silicon Transistor, 80V, 4A, TO-220F, 25 W, 100 μA

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Price:: US $0.20~1.50 / piece [Get Latest Price]

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	US $0.20~1.50

PartNumber:: KSD1408YTU

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-12-21

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Part Number:KSD1408YTU
US $0.20 - 1.50
CM300DY-12NF

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M27C4001-10F1

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Product Summary

The KSD1408YTU is an NPN epitaxial silicon transistor.

Parametrics

KSD1408YTU absolute maximum ratings: (1)VCBO Collector-Base Voltage: 80 V; (2)VCEO Collector-Emitter Voltage: 80 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current: 4 A; (5)IB Base Current: 0.4 A; (6)PC Collector Dissipation (TC=25℃): 25 W; (7)TJ Junction Temperature: 150 ℃; (8)TSTG Storage Temperature: - 55 to 150 ℃.

Features

KSD1408YTU features: (1)BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0: 80 V; (2)ICBO Collector Cut-off Current VCB = 80V, IE = 0: 30 μA; (3)IEBO Emitter Cut-off Current VEB = 5V, IC = 0: 100 μA; (4)h FE1 DC Current Gain VCE = 5V, IC = 0.5A: 40 to 240; (5)VCE(sat) Collector-Emitter Saturation Voltage IC = 3A. IB = 0.3A: 0.45 to 1.5 V; (6)VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 3A: 1 to 1.5 V; (7)fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A: 8 MHz; (8)Cob Output Capacitance VCB = 10V, f = 1MHz: 90 pF.