Product Summary
The KSD1408YTU is an NPN epitaxial silicon transistor.
Parametrics
KSD1408YTU absolute maximum ratings: (1)VCBO Collector-Base Voltage: 80 V; (2)VCEO Collector-Emitter Voltage: 80 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current: 4 A; (5)IB Base Current: 0.4 A; (6)PC Collector Dissipation (TC=25℃): 25 W; (7)TJ Junction Temperature: 150 ℃; (8)TSTG Storage Temperature: - 55 to 150 ℃.
Features
KSD1408YTU features: (1)BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0: 80 V; (2)ICBO Collector Cut-off Current VCB = 80V, IE = 0: 30 μA; (3)IEBO Emitter Cut-off Current VEB = 5V, IC = 0: 100 μA; (4)h FE1 DC Current Gain VCE = 5V, IC = 0.5A: 40 to 240; (5)VCE(sat) Collector-Emitter Saturation Voltage IC = 3A. IB = 0.3A: 0.45 to 1.5 V; (6)VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 3A: 1 to 1.5 V; (7)fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A: 8 MHz; (8)Cob Output Capacitance VCB = 10V, f = 1MHz: 90 pF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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KSD1408YTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
KSD1020 |
Other |
Data Sheet |
Negotiable |
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KSD1020GBU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
Negotiable |
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KSD1020GTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Transistor |
Data Sheet |
Negotiable |
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KSD1020GTA_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Transistor |
Data Sheet |
Negotiable |
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KSD1020OBU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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KSD1020OTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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