Product Summary

The IRFB4610 is a HEXFET Power MOSFET. The applications of the IRFB4610 include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.

Parametrics

IRFB4610 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 73 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 52A; (3)IDM Pulsed Drain Current: 290A; (4)PD @TC = 25℃ Maximum Power Dissipation: 190 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)dV/dt Peak Diode Recovery: 7.6 V/ns; (8)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃; (9)Soldering Temperature, for 10 seconds (1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lb·in (1.1N·m).

Features

IRFB4610 features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability.

Diagrams

IRFB4610 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB4610
IRFB4610

MOSFET N-CH 100V 73A TO-220AB
Data Sheet
Negotiable 
IRFB4610PBF
IRFB4610PBF
International Rectifier
MOSFET MOSFT 100V 73A 14mOhm 90nC Qg
Data Sheet
0-1: $1.93
1-25: $1.32
25-100: $0.98
100-250: $0.94