Product Summary

The IRF7309 is a HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. It has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Parametrics

IRF7309 absolute maximum ratings: (1)10 Sec. Pulse Drain Current, VGS @ 10V: N-Channel: 4.7A, P-Channel: -3.5A; (2)Continuous Drain Current, VGS @ 10V: N-Channel: 4.0A,P-Channel: -3.0A; (3)Continuous Drain Current, VGS @ 10V: N-Channel: 3.2A,P-Channel: -2.4A; (4)Pulsed Drain Current: N-Channel: 16A, P-Channel: -12A; (5)Pulsed Drain Current: 1.4W; (6)Linear Derating Factor (PCB Mount): 0.011W/℃; (7)Gate-to-Source Voltage: ± 20V; (8)Peak Diode Recovery dv/dt: N-Channel: 6.9V/ns, P-Channel: -6.0V/ns; (9)Junction and Storage Temperature Range: -55℃ to +150℃.

Features

IRF7309 features: (1)Generation V Technology; (2)Generation V Technology; (3)Dual N and P Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Dynamic dv/dt Rating.

Diagrams

IRF7309 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7309
IRF7309

International Rectifier

MOSFET N+P 30V 3A 8-SOIC

Data Sheet

1-475: $0.57
IRF7309IPBF
IRF7309IPBF

International Rectifier

MOSFET

Data Sheet

Negotiable 
IRF7309PBF
IRF7309PBF

International Rectifier

MOSFET

Data Sheet

0-1: $0.72
1-25: $0.44
25-100: $0.30
100-250: $0.26
IRF7309QPBF
IRF7309QPBF

International Rectifier

MOSFET

Data Sheet

Negotiable 
IRF7309QTRPBF
IRF7309QTRPBF

International Rectifier

MOSFET

Data Sheet

Negotiable 
IRF7309Q
IRF7309Q

Other


Data Sheet

Negotiable 
IRF7309TRPBF
IRF7309TRPBF

International Rectifier

MOSFET MOSFT DUAL N/PCh 30V 4.0A

Data Sheet

0-1: $0.72
1-25: $0.44
25-100: $0.30
100-250: $0.29
IRF7309TR
IRF7309TR

International Rectifier

MOSFET N+P 30V 3A 8-SOIC

Data Sheet

1-4000: $0.49