Product Summary
The IRF7309 is a HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. It has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Parametrics
IRF7309 absolute maximum ratings: (1)10 Sec. Pulse Drain Current, VGS @ 10V: N-Channel: 4.7A, P-Channel: -3.5A; (2)Continuous Drain Current, VGS @ 10V: N-Channel: 4.0A,P-Channel: -3.0A; (3)Continuous Drain Current, VGS @ 10V: N-Channel: 3.2A,P-Channel: -2.4A; (4)Pulsed Drain Current: N-Channel: 16A, P-Channel: -12A; (5)Pulsed Drain Current: 1.4W; (6)Linear Derating Factor (PCB Mount): 0.011W/℃; (7)Gate-to-Source Voltage: ± 20V; (8)Peak Diode Recovery dv/dt: N-Channel: 6.9V/ns, P-Channel: -6.0V/ns; (9)Junction and Storage Temperature Range: -55℃ to +150℃.
Features
IRF7309 features: (1)Generation V Technology; (2)Generation V Technology; (3)Dual N and P Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Dynamic dv/dt Rating.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF7309 |
International Rectifier |
MOSFET N+P 30V 3A 8-SOIC |
Data Sheet |
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IRF7309IPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7309PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7309QPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7309QTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7309Q |
Other |
Data Sheet |
Negotiable |
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IRF7309TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 30V 4.0A |
Data Sheet |
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IRF7309TR |
International Rectifier |
MOSFET N+P 30V 3A 8-SOIC |
Data Sheet |
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