Product Summary
The IRFP27N60KPBF is a HEXFET Power MOSFET.
Parametrics
IRFP27N60KPBF absolute maximum ratings: (1)ID: 27A; (2)ID: 18 A; (3)IDM: 110A; (4)PD: 500 W; (5)Linear Derating Factor: 4.0 W/℃; (6)VGS Gate-to-Source Voltage: 30 V; (7)dv/dt Peak Diode Recovery dv/dt: 13 V/ns; (8)TJ Operating Junction and: -55 to + 150℃; (9)Soldering Temperature, for 10 seconds: 300℃.
Features
IRFP27N60KPBF features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Enhanced Body Diode dv/dt Capability.
Diagrams
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![]() IRFP27N60KPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 600V 27 Amp |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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![]() IRFP044 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP044, SiHFP044 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() IRFP044N |
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![]() MOSFET N-CH 55V 53A TO-247AC |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP044NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
![]() Data Sheet |
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![]() |
![]() IRFP044PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() IRFP048 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 70 Amp |
![]() Data Sheet |
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