Product Summary

The H21B2 transmissive sensor consists of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system of H21B2 is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state.

Parametrics

H21B2 absolute maximum ratings: (1)Operating Temperature, TOPR: -55 to +100℃; (2)Storage Temperature, TSTG: -55 to +100℃; (3)Soldering Temperature (Iron) (2,3 and 4), TSOL-I: 240 for 5 sec℃; (4)Soldering Temperature (Flow) (2 and 3), TSOL-F: 260 for 10 sec℃; (5)Continuous Forward Current, IF: 50 mA; (6)Reverse Voltage, VR: 6V; (7)Power Dissipation, PD: 100 mW; (8)Collector to Emitter Voltage, VCEO: 30V; (9)Emitter to Collector Voltage, VECO: 6V; (10)Collector Current, IC: 40mA; (11)Power Dissipation (TC= 25℃), PD: 150mW.

Features

H21B2 features: (1)Opaque housing; (2)Low cost; (3)035" apertures; (4)High IC(ON).

Diagrams

H21B2 PACKAGE DIMENSIONS

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
H21B2_Q
H21B2_Q

Fairchild Semiconductor

Optical Switches, Transmissive, with Phototransistor Output INTERUP MOD DARL

Data Sheet

Negotiable 
H21B2
H21B2

Fairchild Semiconductor

Optical Switches, Transmissive, with Phototransistor Output INTERUP MOD DARL

Data Sheet

Negotiable