(Hong Kong)
Product Summary
The FM25256B-GTR is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. These capabilities make the FM25256B-GTR ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation.
Parametrics
FM25256B-GTR absolute maximum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +7.0V; (2)VIN Voltage on any pin with respect to VSS: -1.0V to +7.0V and VIN < VDD+1.0V; (3)TSTG Storage Temperature: -55℃ to + 125℃; (4)TLEAD Lead Temperature (Soldering, 10 seconds): 300℃; (5)VESD Electrostatic Discharge Voltage: Human Body Model (JEDEC Std JESD22-A114-B): 4kV; Charged Device Model (JEDEC Std JESD22-C101-A): 1kV; Machine Model (JEDEC Std JESD22-A115-A): 200V; (6)Package Moisture Sensitivity Level: MSL-1.
Features
FM25256B-GTR features: (1)256K bit Ferroelectric Nonvolatile RAM; (2)Very Fast Serial Peripheral Interface - SPI; (3)Write Protection Scheme: Hardware Protection; Software Protection; (4)Wide Operating Range: Wide Voltage Operation 4.0V-5.5V; (5)Industry Standard Configurations: Industrial Temperature -40℃ to +85℃; 8-pin Green/RoHS SOIC (-G).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FM25256B-GTR |
Ramtron |
F-RAM 256K (32Kx8) 5V |
Data Sheet |
Negotiable |
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Pricing (USD) |
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Negotiable |
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