Product Summary

The AP4435GJ is an advanced power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Parametrics

AP4435GJ absolute maximum ratings: (1)VDS, Drain-Source Voltage: -30V; (2)VGS, Gate-Source Voltage: ±20V; (3)ID@TA=25℃, Continuous Drain Current: -9A; (4)ID@TA=70℃, Continuous Drain Current: -7.3A; (5)IDM, Pulsed Drain Current: 50A; (6)PD@TA=25℃, Total Power Dissipation: 2.5W; (7)Linear Derating Factor: 0.02W/℃; (8)TSTG, Storage Temperature Range: -55 to 120 ℃; (9)TJ, Operating Junction Temperature Range: -55 to 150℃.

Features

AP4435GJ features: (1)Simple Drive Requirement; (2)Low On-resistance; (3)Fast Switching Characteristic.

Diagrams

AP4435GJ block diagram