(Hong Kong)
Product Summary
Powerex IGBTMOD Module CM600DU-24F is designed for use in switching applications. The CM600DU-24F consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Parametrics
CM600DU-24F absolute maximum ratings: (1)Junction Temperature, Tj: -40 to 150℃; (2)Storage Temperature Tstg -40 to 125℃; (3)Collector-Emitter Voltage (G-E SHORT), VCES: 1200Volts; (4)Gate-Emitter Voltage (C-E SHORT), VGES: ±20Volts; (5)Collector Current (Tc = 25℃), IC: 600 Amperes; (6)Peak Collector Current, ICM: 1200Amperes; (7)Emitter Current(Tc = 25℃), IE: 600Amperes; (8)Peak Emitter Current, IEM: 1200Amperes; (9)Maximum Collector Dissipation (Tc = 25℃, Tj ≤ 150℃), Pc: 1540Watts.
Features
CM600DU-24F features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)Isolated Baseplate for Easy Heat Sinking.
Diagrams
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 CM600DU-24F |
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IGBT MOD DUAL 1200V 600A F SER |
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CM600DU-24F |
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IGBT MOD DUAL 1200V 600A F SER |
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CM600DU-24NF |
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IGBT MOD DUAL 1200V 600A NF SER |
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CM600DU-24NFH |
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IGBT MOD DUAL 1200V 600A NFH SER |
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CM600DU-5F |
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IGBT MOD DUAL 250V 600A F SER |
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CM600DY-12NF |
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IGBT MOD DUAL 600V 600A NF SER |
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CM600DY-24A |
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IGBT MOD DUAL 1200V 600A A SER |
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