(Hong Kong)
Product Summary
The 2SK2488 is an N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
Parametrics
2SK2488 absolute maximum ratings: (1)Drain to Source Voltage, VDSS: 900 V; (2)Gate to Source Voltage, VGSS: ±30 V; (3)Drain Current (DC), ID (DC): ±10 A; (4)Drain Current (pulse), ID (pulse): ±20 A; (5)Total Power Dissipation (Tc = 25℃), PT1: 150 W; (6)Total Power Dissipation (TA = 25℃), PT2: 3.0 W; (7)Channel Temperature, Tch: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃; (9)Single Avalanche Current, IAS: 10 A; (10)Single Avalanche Energy, EAS: 294 mJ.
Features
2SK2488 features: (1)Low On-Resistance, RDS (on) = 1.2 W (VGS = 10 V, ID = 5.0 A); (2)Low Ciss Ciss = 2 900 pF TYP; (3)High Avalanche Capability Ratings.
Diagrams
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 2SK2488 |
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2SK2002-01MR |
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2SK2003-01MR |
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2SK2007 |
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2SK2008 |
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2SK2009 |
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2SK2010 |
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