Product Summary

The 2SC5707S-TL is a NPN Epitaxial Planar Silicon Transistor.

Parametrics

Absolute maximum ratings: (1)Collector-to-Base Voltage:80V; (2)Collector-to-Emitter Voltage:80V; (3)Collector-to-Emitter Voltage:50V; (4)Emitter-to-Base Voltage:6V; (5)Collector Current:8A; (6)Collector Current (Pulse):11A; (7)Base Current:2A; (8)Collector Dissipation:1.0W, Tc=25℃:15W; (9)Junction Temperature:150℃; (10)Storage Temperature:-55℃ to +150℃.

Features

Features: (1)Adoption of FBET, MBIT process; (2)Large current capacitance; (3)Low collector-to-emitter saturation voltage; (4)High-speed switching; (5)High allowable power dissipation.

Diagrams

2SC5000
2SC5000

Other


Data Sheet

Negotiable 
2SC5001TLQ
2SC5001TLQ

ROHM Semiconductor

Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3

Data Sheet

0-1: $0.63
1-25: $0.55
25-100: $0.42
100-500: $0.28
2SC5001TLR
2SC5001TLR

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 20V 10A

Data Sheet

0-2500: $0.24
2500-5000: $0.24
2SC5002
2SC5002

Other


Data Sheet

Negotiable 
2SC5003
2SC5003

Other


Data Sheet

Negotiable 
2SC5004
2SC5004

Other


Data Sheet

Negotiable