Product Summary

The SI4835DY-T1 P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The SI4835DY-T1 is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The applications of it are Battery protection, Load switch, Motor drives.

Parametrics

SI4835DY-T1 absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)VGSS Gate-Source Voltage: ±25 V; (3)ID Drain Current - Continuous: -8.8 A, Pulsed: -50A; (4)PD Power Dissipation for Single Operation: 2.5 W; (5)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150 °C.

Features

SI4835DY-T1 features: (1)-8.8 A, -30 V. RDS(ON)= 0.020 Ω @ VGS = -10 V, RDS(ON)= 0.035 Ω @ VGS = -4.5 V; (2)Extended VGSS range (±25V)for battery applications; (3)Low gate charge (19nC typical); (4)Fast switching speed; (5)High performance trench technology for extremely low RDS(ON); (6)High power and current handling capability.

Diagrams

SI4835DY-T1 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI4835DY-T1
SI4835DY-T1

Vishay/Siliconix

MOSFET 30V 8A 2.5W

Data Sheet

Negotiable 
SI4835DY-T1-E3
SI4835DY-T1-E3

Vishay/Siliconix

MOSFET 30V 8A 2.5W

Data Sheet

Negotiable