Product Summary

The STF26NM60N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. The STF26NM60N is use for Switching applications.

Parametrics

STF26NM60N absolute maximum ratings: (1)Drain-source voltage: 600 V; (2)VGS Gate-source voltage: ± 25 V; (3)ID Drain current (continuous)at TC = 25 °C: 20A; (4)Drain current (continuous)at TC = 100 °C: 12.6A; (5)Drain current (pulsed): 80A; (6)PTOT Total dissipation at TC = 25 °C: 35 W, Derating factor: 0.28 W/°C; (7)Peak diode recovery voltage slope: 15 V/ns; (8)Insulation withstand voltage (RMS)from all three leads to external heat sink: 2500 V; (9)Tstg Storage temperature: –55 to 150 °C; (10)Tj Max. operating junction temperature: 150 °C.

Features

STF26NM60N features: (1)100% avalanche tested; (2)Low input capacitance and gate charge; (3)Low gate input resistance.

Diagrams

STF26NM60N package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STF26NM60N
STF26NM60N
STMicroelectronics
MOSFET N-channel 600 V 20 A Mdmesh
Data Sheet
0-605: $2.40
605-1000: $2.03
1000-2000: $1.93
STF26NM60N-H
STF26NM60N-H
STMicroelectronics
MOSFET POWER MOSFET N-CH 600V
Data Sheet
0-645: $1.94
645-1000: $1.70
1000-2000: $1.62