SI4401BDY-T1-E3

P-Channel 40-V (D-S) MOSFET, SI4401BDY-T1-E3, 0.011Ω, 406A, 1.9V

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Price:: US $0.16~0.25 / piece [Get Latest Price]

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Qty (lots)	Price/lot
10 ~ 99 :	0.25 / Piece
100 ~ 1000 :	0.16 / Piece

PartNumber:: SI4401BDY-T1-E3

Brand:: Vishay General Semiconductor - Vishay | D/C: 11+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-22

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Part Number:SI4401BDY-T1-E3
US $0.16 - 0.25
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piece

Product Summary

The SI4401BDY-T1-E3 is a P-Channel 40-V (D-S) MOSFET. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the SI4401BDY-T1-E3.

Parametrics

SI4401BDY-T1-E3 general specifications: (1)Gate Threshold Voltage: 1.9 V; (2)On-State Drain Current: 406 A; (3)Drain-Source On-State Resistance: 0.011Ω; (4)Forward Transconductance: 26 S; (5)Diode Forward Voltage: -0.74 V.

Features

SI4401BDY-T1-E3 features: (1)P-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the −55 to 125°C Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.