(Hong Kong)
Product Summary
The FDPF51N25 N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDPF51N25 is well suited for high efficient switched mode power supplies and active power factor correction.
Parametrics
FDPF51N25 absolute maximum ratings: (1)Drain-Source Voltage: 250 V; (2)ID Drain Current: 51A; (3)IDM Drain Current - Pulsed: 204 A; (4)VGSS Gate-Source voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 1111 mJ; (6)IAR Avalanche Current: 51 A; (7)EAR Repetitive Avalanche Energy: 32 mJ; (8)dv/dt Peak Diode Recovery dv/dt: : 4.5 V/ns; (9)PD Power Dissipation: 38W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 °C.
Features
FDPF51N25 features: (1)51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V; (2)Low gate charge ( typical 55 nC); (3)Low Crss ( typical 63 pF); (4)Fast switching; (5)Improved dv/dt capability.
Diagrams
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 FDPF51N25 |
Fairchild Semiconductor |
MOSFET 250V N-Channel MOSFET |
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FDPF51N25YDTU |
Fairchild Semiconductor |
MOSFET 250V 28A N-CH UNIFET |
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