(Hong Kong)
Product Summary
The IRF9952TRPBF is a Power MOSFET. The IRF9952TRPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF9952TRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF9952TRPBF absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±20V;(3)Continuous Drain Current, ID @ TA = 25℃: 3.5A; (4)Continuous Drain Current,ID @ TA = 70℃: 2.8A; (5) Pulsed Drain Current. IDM: 16A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
IRF9952TRPBF features: (1) Generation V Technology; (2) Ultra Low On-resistance; (3)Dual N and P Channel MOSFET; (4) Surface Mount; (5)Very Low Gate Charge and Switching Losses; (6)Fully Avalanche Rated.
Diagrams
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 IRF9952TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 30V 3.5A |
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