(Hong Kong)
Product Summary
The KST2222A is an NPN Epitaxial Silicon Transistor.
Parametrics
KST2222A absolute maximum ratings: (1)Collector-Base Voltage: 75 V; (2)VCEO Collector-Emitter Voltage: 40 V; (3)VEBO Emitter-Base Voltage: 6 V; (4)IC Collector Current: 600 mA; (5)PC Collector Power Dissipation: 350 mW; (6)TSTG Storage Temperature Range: -55 ~ 150 °C.
Features
KST2222A features: (1)Collector-Base Breakdown Voltage IC = 10µA, IE = 0: 75 V; (2)BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0: 40 V; (3)BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0: 6 V; (4)ICBO Collector Cut-off Current VCB = 60V, IE = 0: 0.01 μA.
Diagrams
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 KST2222A |
Other |
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Data Sheet |
Negotiable |
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KST2222AMTF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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