Product Summary

The RURU10060 is an ultrafast diode with soft recovery characteristics (trr < 80ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. The applicaitons of the RURU10060 are (1)Switching Power Supplies; (2)Power Switching Circuits; (3)General Purpose.

Parametrics

RURU10060 absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, VRRM 600 V; (2)Working Peak Reverse Voltage, VRWM 600 V; (3)DC Blocking Voltage,VR 600 V; (4)Average Rectified Forward Current, IF(AV) 100 A; (5)Repetitive Peak Surge Current, IFRM 200 A; (6)Nonrepetitive Peak Surge Current, IFSM 1000 A; (7)Maximum Power Dissipation, PD 210 W; (8)Avalanche Energy , EAVL 50 mJ; (9)Operating and Storage Temperature, TSTG, TJ -65 to 175℃.

Features

RURU10060 features: (1)Ultrafast with Soft Recovery: <80ns; (2)Operating Temperature: 175℃; (3)Reverse Voltage: 600V; (4)Avalanche Energy Rated; (5)Planar Construction.

Diagrams

RURU10060 block diagram

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