Product Summary

The STW26NM60N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. The STW26NM60N is use for Switching applications.

Parametrics

STW26NM60N absolute maximum ratings: (1)Drain-source voltage: 600 V; (2)VGS Gate-source voltage: ± 25 V; (3)ID Drain current (continuous)at TC = 25 °C: 20A; (4)Drain current (continuous)at TC = 100 °C: 12.6A; (5)Drain current (pulsed): 80A; (6)PTOT Total dissipation at TC = 25 °C: 140 W, Derating factor: 1.12 W/°C; (7)Peak diode recovery voltage slope: 15 V/ns; (8)Insulation withstand voltage (RMS)from all three leads to external heat sink: 2500 V; (9)Tstg Storage temperature: –55 to 150 °C; (10)Tj Max. operating junction temperature: 150 °C.

Features

STW26NM60N features: (1)100% avalanche tested; (2)Low input capacitance and gate charge; (3)Low gate input resistance.

Diagrams

STW26NM60N package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STW26NM60N
STW26NM60N
STMicroelectronics
MOSFET N-channel 600 V Mdmesh II Power
Data Sheet
0-1: $2.18
1-10: $2.12
10-100: $1.93
100-250: $1.63
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(USD)		 Quantity
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Data Sheet
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Data Sheet
0-1: $1.28
1-10: $1.15
10-100: $0.94
100-250: $0.87
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10-100: $3.06
100-250: $2.81
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Data Sheet
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Data Sheet
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1-10: $1.57
10-100: $1.40
100-250: $1.25
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Data Sheet
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