Product Summary

The FMP06N60ES is an N-channel silicon power MOSFET. The applications of it are Switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.

Parametrics

FMP06N60ES absolute maximum ratings: (1)Drain-Source Voltage VDS: 600 V; (2)VDSX: 600 V; (3)VGS = -30V; (4)Continuous Drain Current ID: ±6 A; (5)Pulsed Drain Current IDP: ±24 A; (6)Gate-Source Voltage VGS: ±30 V; (7)Repetitive and Non-Repetitive Maximum Avalanche Current IAR: 6 A; (8)Non-Repetitive Maximum Avalanche Energy EAS: 313.7 mJ; (9)Repetitive Maximum Avalanche Energy EAR: 10.5 mJ; (10)Peak Diode Recovery dV/dt dV/dt: 3.8 kV/μs; (11)Peak Diode Recovery -di/dt -di/dt: 100 A/μs.

Features

FMP06N60ES features: (1)Maintains both low power loss and low noise; (2)Lower RDS(on)characteristic; (3)More controllable switching dv/dt by gate resistance; (4)Smaller VGS ringing waveform during switching; (5)Narrow band of the gate threshold voltage (3.7±0.5V); (6)High avalanche durability.

Diagrams

FMP06N60ES plackage dimensions