Product Summary

The IRF7832TRPBF is a HEXFET Power MOSFET. The applications of the IRF7832TRPBF include Synchronous MOSFET for Notebook Processor Power, Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems.

Parametrics

IRF7832TRPBF absolute maximum ratings: (1)VDS, Drain-to-Source Voltage: 30 V; (2)VGS, Gate-to-Source Voltage: ±20V; (3)ID @ TA = 25℃, Continuous Drain Current, VGS @ 10V: 20A; (4)ID @ TA = 70℃, Continuous Drain Current, VGS @ 10V: 16 A; (5)IDM, Pulsed Drain Current: 160A; (6)PD @TA = 25℃, Power Dissipation: 2.5 W; (7)PD @TA = 70℃, Power Dissipation: 1.6W; (8)Linear Derating Factor: 0.02 W/℃.; (9)TJ,TSTG, Operating Junction and Storage Temperature Range: -55 to + 155℃.

Features

IRF7832TRPBF features: (1)Very Low RDS(on) at 4.5V VGS; (2)Ultra-Low Gate Impedance; (3)Fully Characterized Avalanche Voltage and Current; (4)20V VGS Max. Gate Rating.

Diagrams

IRF7832TRPBF circuit diagram

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