Product Summary

The k3561 is a Silicon N Channel MOS Type Switching Regulator.

Parametrics

k3561 absolute maximum ratings: (1)Drain-source voltage, VDSS: 500 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 500 V; (3)Gate-source voltage, VGSS: ±30 V; (4)Drain current, DC, ID: 8A; Pulse (t = 1 ms), IDP: 32A; (5)Drain power dissipation (Tc = 25℃), PD: 40 W; (6)Single pulse avalanche energy, EAS: 312 mJ; (7)Avalanche current, IAR: 8 A; (8)Repetitive avalanche energy, EAR: 4 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.

Features

k3561 features: (1)Low drain-source ON resistance: RDS (ON) = 0.75Ω(typ.); (2)High forward transfer admittance: |Yfs| = 6.5S (typ.); (3)Low leakage current: IDSS = 100μs (VDS = 500 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

k3561 block diagram