Product Summary
The STD3NK80Z-1 is a power MOSFET. It is obtained through an extreme optimization of STs well established stripbased PowerMES layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The STD3NK80Z-1 complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
Parametrics
STD3NK80Z-1 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 800V ; (2)Drain- gate Voltage (RGS = 20 kΩ): 800V ; (3)Gate-Source Voltage: ± 30 V ; (4)Drain Current (continuous) at Tc = 25℃: 2.5A; (5)Drain Current (continuous) at Tc = 100℃: 1.57 A ; (6)Drain Current (pulsed): 10 A ; (7)Total Dissipation at Tc = 25℃: 70W ; (8)Derating Factor: 0.56 W/℃; (9)Storage Temperature: -55 to 150℃ ; (10)Operating Junction Temperature: 55 to 150℃.
Features
STD3NK80Z-1 features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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STD3NK80Z-1 |
STMicroelectronics |
MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
STD300BLK |
VCC |
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Data Sheet |
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STD30NE06 |
STMicroelectronics |
MOSFET N-CH 60V 30A |
Data Sheet |
Negotiable |
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STD30NE06L |
STMicroelectronics |
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Data Sheet |
Negotiable |
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STD30NE06LT4 |
STMicroelectronics |
MOSFET N-Ch 60 Volt 30 Amp |
Data Sheet |
Negotiable |
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STD30NE06T4 |
STMicroelectronics |
MOSFET N-CH 60V 30A |
Data Sheet |
Negotiable |
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STD30NF03L |
Other |
Data Sheet |
Negotiable |
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