(Hong Kong)
Product Summary
The TK5P50D is a TOSHIBA Field Effect Transistor.
Parametrics
TK5P50D absolute maximum ratings: (1)Drain-source voltage VDSS: 500 V; (2)Gate-source voltage VGSS: ±30 V; (3)DC (Note 1) ID: 5A; (4)Drain current Pulse (t = 1 ms) IDP 20A; (5)Drain power dissipation (Tc = 25℃) PD: 80 W; (6)Single pulse avalanche energy (Note 2) EAS: 128 mJ; (7)Avalanche current IAR: 5 A; (8)Repetitive avalanche energy (Note 3) EAR: 8 mJ; (9)Channel temperature Tch: 150℃; (10)Storage temperature range Tstg : -55 to 150℃.
Features
TK5P50D features: (1)Low drain-source ON-resistance: RDS (ON) = 1.3Ω(typ.); (2)High forward transfer admittance: .Yfs. = 3.0 S (typ.); (3)Low leakage current: IDSS = 10μA (max) (VDS = 500 V); (4)Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
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 TK5P50D(T6RSS-Q) |
Toshiba |
MOSFET N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||
|
TK5P50D(T6RSS-Q) |
Toshiba |
MOSFET N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm |
Data Sheet |
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TK5P53D(T6RSS-Q) |
Toshiba |
MOSFET N-Ch MOS 5A 525V 80W 540pF 1.5Ohm |
Data Sheet |
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