Product Summary
The TK5A60D is a switching Regulator.
Parametrics
TK5A60D absolute maximum ratings: (1)Drain-source voltage, VDSS: 600 V; (2)Gate-source voltage, VGSS: ±30 V; (3)Drain current Pulse (t = 1 ms), DC (Note 1), ID 5A; (Note 1), IDP: 20A; (4)Drain power dissipation (Tc = 25℃), PD: 35 W; (5)Single pulse avalanche energy(Note 2), EAS: 189 mJ; (6)Avalanche current, IAR: 5 A; (7)Repetitive avalanche energy (Note 3), EAR: 3.5 mJ; (8)Channel temperature, Tch: 150℃; (9)Storage temperature range, Tstg: -55 to 150℃.
Features
TK5A60D features: (1)Low drain-source ON-resistance: RDS (ON) = 1.2 Ω(typ.); (2)High forward transfer admittance: Yfs = 3.0 S (typ.); (3)Low leakage current: IDSS = 10μa(max) (VDS = 600 V); (4)Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA).
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() TK5A60D(STA4,Q,M) |
![]() Toshiba |
![]() MOSFET N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm |
![]() Data Sheet |
![]()
|
|
||||||||||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() TK5A50D(STA4,Q) |
![]() Toshiba |
![]() MOSFET N-Ch 500V 5A 1.5Ohm 10uA FET |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() TK5A53D(STA4,Q,M) |
![]() Toshiba |
![]() MOSFET N-Ch MOS 5A 525V 35W 540pF 1.5 OhM |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() TK5A55D(STA4,Q,M) |
![]() Toshiba |
![]() MOSFET N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() TK5A60D(STA4,Q,M) |
![]() Toshiba |
![]() MOSFET N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() TK5A65D(Q) |
![]() Toshiba |
![]() MOSFET N-ch 650V 5A TO-220SIS |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() TK5A65D(STA4,Q,M) |
![]() Toshiba |
![]() MOSFET N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm |
![]() Data Sheet |
![]()
|
|