(Hong Kong)
Product Summary
The TIP31C is a complementary silicon plastic power transistor.
Parametrics
TIP31C absolute maximum ratings: (1)Collecto-emitter Voltage: 100 Vdc; (2)Collector-base Voltage: 100 Vdc; (3)Emitter-base Voltage: 5.0 Vdc; (4)Collector Current-Continuous: 3.0 Adc, Peak: 5.0 Adc; (5)Base Current: 1.0 Adc; (6)Total Power Dissipation @ TC = 25℃: 40 Watts, Derate above 25℃: 0.32 W/℃; (7)Unclamped Inductive Load Energy: 32 mJ; (8)Operating and Storage Junction: -65 to +150℃; (9)Temperature Range: -65 to +150℃.
Features
TIP31C features: (1)Collector-emitter Saturation Voltage: VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; (2)Collector-emitter Sustaining Voltage: VCEO(sus) = 100 Vdc (Min); (3)High Current Gain-Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc; (4)Compact TO-220 AB Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 TIP31C |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Gen Pur Power |
Data Sheet |
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TIP31C-BP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) NPN 100V 3A 40W |
Data Sheet |
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TIP31CE3 |
Other |
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Data Sheet |
Negotiable |
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TIP31CF |
Other |
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Data Sheet |
Negotiable |
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TIP31CG |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 100V 40W NPN |
Data Sheet |
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TIP31CH1TU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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TIP31C-S |
Bourns |
Transistors Bipolar (BJT) 100V 3A NPN |
Data Sheet |
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TIP31CTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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