Product Summary
The SI4459ADY is a P-Channel MOSFET. The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. Its applications include adaptor switch, notebook.
Parametrics
SI4459ADY absolute maximum ratings: (1)drain-source voltage: -30V; (2)gate-source voltage: ±20V; (3)continuous drain current: -29A; (4)pulsed drain current: -70A; (5)continuous source-drain diode current: -6.5A; (6)maximum power dissipation: 5W; (7)operating junction and storage temperature range: -55 to 150℃.
Features
SI4459ADY features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100% Rg and UIS Tested; (4)Compliant to RoHS Directive 2002/95/EC.
Diagrams
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![]() Si4459ADY |
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![]() SI4459ADY-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 29A 7.8W 5.0mohm @ 10V |
![]() Data Sheet |
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