(Hong Kong)
Product Summary
The RDX100N60 is a Silicon N-channel MOS FET. The application of the RDX100N60 includes switching.
Parametrics
RDX100N60 absolute maximum ratings: (1)Drain-source voltage, VDSS: 600V; (2)Gate-source voltage, VGSS: ±30V; (3)Drain current, continuous, ID: ±10A; Pulsed: ±40A; (4)Source current, continous, IS: 10A; Pulsed: 40A; (5)Avalanche current, IAS: 10A; (6)Avalanche energy, EAS: 230mJ; (7)Total power dissipation (Tc=25℃), PD: 45W; (8)Channel temperature, Tch: 150℃; (9)Range of storage temperature, Tstg: -55 to 150℃.
Features
RDX100N60 features: (1)Low on-resistance; (2)Low input capacitance; (3)Excellent resistance to damage from static electricity.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 RDX100N60FU6 |
ROHM Semiconductor |
MOSFET MOSFET PWR SWITCHING Nch; 600V; 10 Id |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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RDX100N60FU6 |
ROHM Semiconductor |
MOSFET MOSFET PWR SWITCHING Nch; 600V; 10 Id |
Data Sheet |
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RDX120N50FU6 |
ROHM Semiconductor |
MOSFET MOSFET PWR SWITCHING Nch; 500V; 12 Id |
Data Sheet |
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