(Hong Kong)
Product Summary
The K4M51323PC-DG75 is a 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the K4M51323PC-DG75 to be useful for a variety of high bandwidth and high per-formance memory system applications.
Parametrics
K4M51323PC-DG75 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 2.6 V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 2.6 V; (3)Storage temperature, TSTG: -55 to +150℃; (4)Power dissipation, PD: 1.0 W; (5)Short circuit current, IOS: 50 mA.
Features
K4M51323PC-DG75 features: (1)1.8V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency; Burst length; Burst type (Sequential & Interleave); (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation.; (8)Special Function Support: PASR (Partial Array Self Refresh); Internal TCSR (Temperature Compensated Self Refresh); DS (Driver Strength); DPD (Deep Power Down) ; (9)DQM for masking; (10)Auto refresh; (11)64ms refresh period (8K cycle); (12)Extended Temperature Operation (-25℃ ~ 85℃); (13)Commercial Temperature Operation (-25℃ ~ 70℃); (14)90Balls FBGA( -SXXX -Pb, -DXXX -Pb Free).
Diagrams
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K4M51163LE-Y(P)C/L/F |
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K4M513233E-M(E)C/L/F |
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K4M56163PE-R(B)G/F |
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