Product Summary

The P1504EDG is a P-Channel Enhancement Mode MOSFET.

Parametrics

P1504EDG absolute maximum ratings: (1)Drain-Source Voltage, VDS: -40V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, TC=25℃, ID: -45A; TC = 100℃, ID: -36A; (4)Pulsed Drain Current, IDM: -150A; (5)Avalanche Current, IAS: -45A; (6)Avalanche Energy, L = 10mH, EAS: 102mJ; (7)Power Dissipation, TA=25℃, PD: 50W; TA = 100℃, PD: 32W; (8)Operating Junction & Storage Temperature Range, TJ,TSTG: -55 to 150℃.

Features

P1504EDG features: (1)Drain-Source Breakdown Voltage, V(BR)DSS: -40V; (2)Gate Threshold Voltage, VGS(th): -1.7 to -3V; (3)Gate-Body Leakage, IGSS: ±100nA; (4)Zero Gate Voltage Drain Current, IDSS: 10μA; (5)On-State Drain Current, ID(ON): -150A; (6)Drain-Source On-State Resistance, RDS(ON): 29mΩ; (7)Forward Transconductance, gfs: 24S.

Diagrams

P1504EDG block diagram