(Hong Kong)
Product Summary
The P10NK60ZFP is an N-channel Zener-protected SuperMESH Power MOSFET obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the P10NK60ZFP include high current, high speed switching, ideal for off-line power supplies, adaptor and PFC, lighting.
Parametrics
P10NK60ZFP absolute maximum ratings: (1)VDS, Drain-Source Voltage (VGS = 0): 600 V; (2)VDGR, Drain-gate Voltage (RGS = 20kΩ): 600 V; (3)VGS, Gate-Source Voltage: ±30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 10A; (5)ID, Drain Current (continuous) at TC = 100℃: 5.7A; (6)IDM, Drain Current (pulsed): 36A; (7)PTOT, Total Dissipation at TC = 25℃: 115W; (8)Derating Factor: 0.92W/℃; (9)Vesd(G-S), G-S ESD (HBM C=100pF, R=1.5kΩ): 4000 V; (10)dv/dt, Peak Diode Recovery voltage slope: 4.5 V/ns; (11)VISO, Insulation Withstand Volatge (DC): 2500V; (12)Tj, Operating Junction Temperature: -55 to 150℃; (13)Tstg, Storage Temperature: -55 to 150℃.
Features
P10NK60ZFP features: (1)Typical RDS(on) = 0.65 Ω; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)Gate charge minimized; (5)Very low intrinsic capacitances; (6)Very good manufacturing repeability.
Diagrams
