Product Summary

The NDS9948 is a Dual P-Channel Enhancement Mode Field Effect Transistor. The NDS9948 is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parametrics

NDS9948 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -60 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current - Continuous TA = 25℃: ±2.3 A; Pulsed TA = 25℃: ± 10A; Continuous TA = 70℃: ± 1.8A; (4)PD, Power Dissipation for Dual Operation: 2 W; (5)Power Dissipation for Single Operation (Note 1a) 1.6W; (Note 1b) 1W; (Note 1c) 0.9W; (6)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.

Features

NDS9948 features: (1)-2.3A, -60V. RDS(ON) = 0.25W @ VGS = -10V; (2)High density cell design for low RDS(ON); (3)High power and current handling capability in a widely used surface mount package; (4)Dual MOSFET in surface mount package.

Diagrams

NDS9948 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
NDS9948
NDS9948
Fairchild Semiconductor
MOSFET Dual PCh PowerTrench
Data Sheet
0-1: $0.65
1-25: $0.58
25-100: $0.46
100-250: $0.40
NDS9948_Q
NDS9948_Q
Fairchild Semiconductor
MOSFET Dual PCh PowerTrench
Data Sheet
Negotiable