(Hong Kong)
Product Summary
The MJE800 is a plastic darlington complementary silicon power transistor. It is designed for general-purpose amplifier and low-speed switching applications.
Parametrics
MJE800 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 60Vdc; (2)Collector-Base Voltage, VCB: 60Vdc; (3)Emitter-Base Voltage, VEB: 5.0Vdc; (4)Collector Current, IC: 4.0Adc; (5)Base Current, IB: 0.1Adc; (6)Total Power Dissipation @ TC = 25℃ PD: 40W; Derate above 25℃ PD: 0.3mW/℃; (7)Operating and Storage Junction Temperature Range TJ, Tstg: -55 to +150℃.
Features
MJE800 features: (1)High DC Current Gain - hFE = 2000 (Typ) @ IC; 2.0 Adc; (2)Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage - Multiplication; (3)Choice of Packages.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MJE800 |
ON Semiconductor |
Transistors Darlington 4A 60V Bipolar |
Data Sheet |
Negotiable |
|
||||||||||||
|
MJE800G |
ON Semiconductor |
Transistors Darlington 4A 60V Bipolar Power NPN |
Data Sheet |
|
|
||||||||||||
|
MJE800STU |
Fairchild Semiconductor |
Transistors Darlington NPN Si Transistor Epitaxial Darlington |
Data Sheet |
|
|
||||||||||||
