Product Summary
The M25P40-VMN6P is a 4 Mbit (512K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The M25P40-VMN6P can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 2048 pages, or 524,288 bytes. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.
Parametrics
M25P40-VMN6P absolute maximum ratings: (1)TSTG Storage Temperature: -65 to 150℃; (2)TLEAD Lead Temperature during Soldering: See note 1; (3)VIO Input and Output Voltage (with respect to Ground): -0.6 to 4.0 V; (4)VCC Supply Voltage: -0.6 to 4.0 V; (5)VESD Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V.
Features
M25P40-VMN6P features: (1)4 Mbit of Flash Memory; (2)Page Program (up to 256 Bytes) in 1.5ms (typical); (3)Sector Erase (512 Kbit) in 1s (typical); (4)Bulk Erase (4 Mbit) in 4.5s (typical); (5)2.7 to 3.6V Single Supply Voltage; (6)SPI Bus Compatible Serial Interface; (7)40MHz Clock Rate (maximum); (8)Deep Power-down Mode 1μA (typical); (9)Electronic Signature (12h).
Diagrams
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![]() M25P40-VMN6P |
![]() STMicroelectronics |
![]() Flash Lo-Volt 4M (512Kx8) |
![]() Data Sheet |
![]() Negotiable |
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