Product Summary

The KSB1017YTU is a Power Amplifier.

Parametrics

KSB1017YTU absolute maximum ratings: (1)VCBO, Collector-Base Voltage: -80V; (2)VCEO, Collector-Emitter Voltage: - 80 V; (3)VEBO, Emitter-Base Voltage: - 5 V; (4)IC, Collector Current: - 4 A; (5)IB, Base Current: - 0.4 A; (6)PC, Collector Dissipation ( TC=25℃): 25 W; (7)TJ, Junction Temperature: 150℃; (8)TSTG, Storage Temperature: -55 ~ 150℃.

Features

KSB1017YTU features: (1)BVCEO, Collector-Emitter Breakdown Voltage, IC = - 50mA, IB = 0: -80 V; (2)ICBO, Collector Cut-off Current, VCB = - 80V, IE = 0: -30 μA; (3)IEBO, Emitter Cut-off Current, VEB = - 5V, IC = 0: -100 μA; (4)hFE1, DC Current Gain, VCE = - 5V, IC = - 0.5A: 40 to 240; (5)hFE2, VCE = - 5V, IC = - 3A: 15; (6)VCE(sat), Collector-Emitter Saturation Voltage, IC = - 3A, IB = - 0.3A: -1 to -1.7 V; (7)VBE(on), Base-Emitter ON Voltage, VCE = - 5V, IC = - 3A: -1 to -1.5 V; (8)fT, Current Gain Bandwidth Product, VCE = - 5V, IC = - 0.5A: 9 MHz; (9)Cob, Output Capacitance, VCB = - 10V, f = 1MHz: 130 pF.

Diagrams

KSB1017YTU block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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KSB1017YTU
KSB1017YTU

Fairchild Semiconductor

Transistors Bipolar (BJT) PNP Epitaxial Sil

Data Sheet

0-1: $0.35
1-25: $0.30
25-100: $0.22
100-250: $0.19
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
KSB1015
KSB1015

Other


Data Sheet

Negotiable 
KSB1015O
KSB1015O

Fairchild Semiconductor

Transistors Bipolar (BJT) PNP Epitaxial Sil

Data Sheet

Negotiable 
KSB1015OTU
KSB1015OTU

Fairchild Semiconductor

Transistors Bipolar (BJT) PNP Epitaxial Sil

Data Sheet

0-1: $2.13
1-25: $1.87
25-100: $1.55
100-250: $1.12
KSB1015Y
KSB1015Y

Fairchild Semiconductor

Transistors Bipolar (BJT) PNP Epitaxial Sil

Data Sheet

Negotiable 
KSB1015YTU
KSB1015YTU

Fairchild Semiconductor

Transistors Bipolar (BJT) PNP Epitaxial Sil

Data Sheet

0-1: $0.35
1-25: $0.30
25-100: $0.22
100-250: $0.19
KSB1017
KSB1017

Other


Data Sheet

Negotiable