(Hong Kong)
Product Summary
The KSB1017YTU is a Power Amplifier.
Parametrics
KSB1017YTU absolute maximum ratings: (1)VCBO, Collector-Base Voltage: -80V; (2)VCEO, Collector-Emitter Voltage: - 80 V; (3)VEBO, Emitter-Base Voltage: - 5 V; (4)IC, Collector Current: - 4 A; (5)IB, Base Current: - 0.4 A; (6)PC, Collector Dissipation ( TC=25℃): 25 W; (7)TJ, Junction Temperature: 150℃; (8)TSTG, Storage Temperature: -55 ~ 150℃.
Features
KSB1017YTU features: (1)BVCEO, Collector-Emitter Breakdown Voltage, IC = - 50mA, IB = 0: -80 V; (2)ICBO, Collector Cut-off Current, VCB = - 80V, IE = 0: -30 μA; (3)IEBO, Emitter Cut-off Current, VEB = - 5V, IC = 0: -100 μA; (4)hFE1, DC Current Gain, VCE = - 5V, IC = - 0.5A: 40 to 240; (5)hFE2, VCE = - 5V, IC = - 3A: 15; (6)VCE(sat), Collector-Emitter Saturation Voltage, IC = - 3A, IB = - 0.3A: -1 to -1.7 V; (7)VBE(on), Base-Emitter ON Voltage, VCE = - 5V, IC = - 3A: -1 to -1.5 V; (8)fT, Current Gain Bandwidth Product, VCE = - 5V, IC = - 0.5A: 9 MHz; (9)Cob, Output Capacitance, VCB = - 10V, f = 1MHz: 130 pF.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 KSB1017YTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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KSB1017YTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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KSB1116AYBU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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KSB1116AGTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
Negotiable |
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KSB1116GTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Transistor |
Data Sheet |
Negotiable |
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KSB1116AYTA |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Transistor |
Data Sheet |
Negotiable |
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KSB1116GTA_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Transistor |
Data Sheet |
Negotiable |
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