Product Summary

The KM416C4100 is a 4M x 16bit CMOS Dynamic RAM with Fast Page Mode. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. The KM416C4100 has CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung’s advanced CMOS process to realize high band-width, low power consumption and high reliability.

Parametrics

KM416C4100 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN,VOUT: -1.0 to +7.0 V; (2)Voltage on VCC supply relative to VSS, VCC: -1.0 to +7.0 V; (3)Storage Temperature, Tstg: -55 to +150℃; (4)Power Dissipation, PD: 1 W; (5)Short Circuit Output Current, IOS Address: 50 mA.

Features

KM416C4100 features: (1)Fast Page Mode operation; (2)2CAS Byte/Word Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Fast parallel test mode capability; (6)TTL(5.0V) compatible inputs and outputs; (7)Early Write or output enable controlled write; (8)JEDEC Standard pinout; (9)Available in Plastic TSOP(II) package; (10)+5.0V ±10% power supply.

Diagrams

KM416C4100 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
KM416C4100B
KM416C4100B
Other

Data Sheet
Negotiable 
KM416C4100C
KM416C4100C
Other

Data Sheet
Negotiable