(Hong Kong)
Product Summary
The K7Q163662B is a 512Kx36 & 1Mx18 QDRTM b2 SRAM.
Parametrics
K7Q163662B absolute maximum ratings: (1)Voltage on VDD Supply Relative to VSS, VDD: -0.5 to 3.6 V; (2)Voltage on VDDQ Supply Relative to VSS, VDDQ: -0.5 to VDD V; (3)Voltage on Input Pin Relative to VSS, VIN: -0.5 to VDD+0.3 V; (4)Storage Temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TOPR: 0 to 70℃; (6)Storage Temperature Range Under Bias, TBIAS: -10 to 85℃.
Features
K7Q163662B features: (1)1.8V/2.5V +0.1V/-0.1V Power Supply.; (2)I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O; (3)Separate independent read and write data ports with concurrent read and write operation; (4)HSTL I/O; (5)Full data coherency, providing most current data; (6)Synchronous pipeline read with self timed early write; (7)Registered address, control and data input/output; (8)DDR(Double Data Rate) Interface on read and write ports; (9)Fixed 2-bit burst for both read and write operation; (10)Clock-stop supports to reduce current; (11)Two input clocks(K and K) for accurate DDR timing at clock rising edges only; (12)Two Input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches; (13)Single address bus; (14)Byte writable function; (15)Sepatate read/write control pin(R and W); (16)Simple depth expansion with no data contention.; (17)Programmable output impedance; (18)JTAG 1149.1 compatible test access port; (19)165FBGA(11x15 ball aray FBGA) with body size of 13x15mm.
Diagrams
