(Hong Kong)
Product Summary
The IS61LV51216-10TLI is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the IS61LV51216-10TLI assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61LV51216-10TLI is packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
Parametrics
IS61LV51216-10TLI absolute maximum ratings: (1)Terminal Voltage with Respect to GND:–0.5V to VDD+0.5V; (2)VDD Related to GND:–0.3V to +4.0V; (3)Storage Temperature:–65℃ to +150℃; (4)Power Dissipation:1.0W.
Features
IS61LV51216-10TLI features: (1)High-speed access time:8, 10, and 12 ns; (2)CMOS low power operation; (3)Low stand-by power:Less than 5 mA (typ.) CMOS stand-by; (4)TTL compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial and Automotive temperatures available; (10)Lead-free available.
Diagrams
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 IS61LV51216-10TLI |
ISSI |
SRAM 8Mb 512Kx16 10ns Async SRAM 3.3v |
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IS61LV51216-10TLI-TR |
ISSI |
SRAM 8Mb 512Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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