GT50J325

gate bipolar transistor, 100A, 600V, TO

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Price:: US $1.78~2.13 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
10 ~ 99 :	2.13 / Piece
100 ~ 1000 :	1.78 / Piece

PartNumber:: GT50J325

Brand:: Toshiba Semiconductor - Toshiba | Pack: TO | D/C: 10+

Availability:: Supply Ability: 5000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-16

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Part Number:GT50J325
US $1.78 - 2.13
Quantity:

piece

Product Summary

The gt50j325 is a Toshiaba insulated gate bipolar transistor. Applications of the gt50j325 include: high power switching and fast switching.

Parametrics

gt50j325 absolute maximum ratings: (1) Collector-emitter voltage VCES: 600V; (2) Gate-emitter voltage VGES: ±20V; (3) Collector current Ic: 50A (DC) , Icp: 100A (1ms) ; (4) Emitter-collector forward current IF: 50A (DC) , IFM: 100A (1 ms) ; (5) Collector power dissipation (Tc=25°C) Pc: 240W; (6) Junction temperature Tj: 150°C; (7) Storage temperature range Tstg: -55 to +150°C.

Features

gt50j325 features: (1) The 4th generation; (2) Enhancement-mode; (3) Fast switching (FS): Operating frequency up to 50 kHz (reference) ; (4) High speed: tf = 0.05μs (typ.) ; (5) Low switching loss : Eon= 1.30 mJ (typ.) , Eoff= 1.34 mJ (typ.) ; (6) Low saturation Voltage: VCE(sat)= 2.0 V (typ.) ; (7) FRD included between emitter and collector.