Product Summary
The FGA25N120ANTD is a 1200V NPT Trench IGBT. It offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Parametrics
FGA25N120ANTD absolute maximum ratings: (1)Collector-Emitter Voltage: 1200V; (2)Gate-Emitter Voltage: ± 20V; (3)Collector Current: @ TC = 25℃: 50A; (4)Collector Current: @ TC = 100℃: 25A; (5)Pulsed Collector Current: 90A; (6)Diode Continuous Forward Current: @ TC = 100℃: 25A; (7)Diode Maximum Forward Current: 150A; (8)Maximum Power Dissipation: @ TC = 25℃: 312W; (9)Maximum Power Dissipation: @ TC = 100℃: 125W; (10)Operating Junction Temperature: -55℃ to +150℃; (11)Storage Temperature Range: -55℃ to +150℃.
Features
FGA25N120ANTD features: (1)NPT Trench Technology, Positive temperature coefficient; (2)Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25℃; (3)Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25℃; (4)Extremely enhanced avalanche capability.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() FGA25N120ANTD |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() FGA25N120ANTDTU |
![]() Fairchild Semiconductor |
![]() IGBT Transistors Copak Discrete |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() FGA25N120ANTDTU_F109 |
![]() Fairchild Semiconductor |
![]() IGBT Transistors Copak Discrete |
![]() Data Sheet |
![]()
|
|